? 2003 ixys all rights reserved isolated backside* symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 44n50q 34 a 48n50q 40 a i dm t c = 25 c, note 1 44n50q 176 a 48n50q 192 a i ar t c = 25 c 44n50q 44 a 48n50q 48 a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 15 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 310 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ weight 5 g isoplus 247 tm hiperfet tm power mosfets isoplus247 tm , q-class (electrically isolated backside) n-channel enhancement mode avalanche rated, low q g , high dv/dt features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) z ixys advanced low q g process z rugged polysilicon gate cell structure z rated for unclamped inductive load switching (uis) z fast intrinsic diode applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density g = gate d = drain s = source * patent pending e153432 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 m a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = i t 44n50q 120 m ? notes 2, 3 48n50q 110 m ? v dss i d25 r ds(on) ixfr 44n50q 500 v 34 a 120 m ? ? ? ? ? ixfr 48n50q 500 v 40 a 110 m ? ? ? ? ? t rr 250 ns ds98702d(08/03)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t notes 2, 3 30 42 s c iss 7000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 960 pf c rss 230 pf t d(on) 33 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 22 ns t d(off) r g = 1 ? (external), notes 2, 3 75 n s t f 10 ns q g(on) 190 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 40 nc notes 2, 3 q gd 86 nc r thjc 0.40 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 48 a i sm repetitive; note 1 192 a v sd i f = i t , v gs = 0 v, notes 2, 3 1.5 v t rr 250 ns q rm 1.0 c i rm 10 a i f = 25a,-di/dt = 100 a/ s, v r = 100 v note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % 3. ixfr44n50q: i t = 22 a ixfr48n50q: i t = 24 a isoplus 247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixfr 44n50q ixfr 48n50q
? 2003 ixys all rights reserved ixfr 44n50q ixfr 48n50q fig. 2. extended output characteristics @ 25 deg. c 0 30 60 90 120 02468101214161820 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125 deg. c 0 6 12 18 24 30 36 42 48 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 6 12 18 24 30 36 42 48 0123 45678 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 48a i d = 24a v gs = 10v fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 1224364860728496108120 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case tem perature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfr 44n50q ixfr 48n50q fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 250v i d = 24a i g = 10ma fig. 7. input admittance 0 6 12 18 24 30 36 42 48 54 60 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 6 12 18 24 30 36 42 48 54 60 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maxim um transient therm al resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w)
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